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NTB35N15T4G

Manufacturer:

On Semiconductor

Mfr.Part #:

NTB35N15T4G

Datasheet:
Description:

MOSFETs D2PAK-3 SMD/SMT N-Channel number of channels:1 178 W 150 V Continuous Drain Current (ID):37 A 100 nC

ParameterValue
Voltage Rating (DC)150 V
Length9.65 mm
Width10.29 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Height4.83 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
Contact PlatingTin
Number of Elements1
Current Rating37 A
Lifecycle StatusProduction (Last Updated: 2 months ago)
Max Power Dissipation2 W
Power Dissipation178 W
Number of Channels1
Input capacitance3.2 nF
Continuous Drain Current (ID)37 A
Rds On Max50 mΩ
Drain to Source Voltage (Vdss)150 V
FET Type(Transistor Polarity)N-Channel
Turn-On Delay Time20 ns
Turn-Off Delay Time90 ns
Element ConfigurationSingle
Fall Time120 ns
Rise Time125 ns
Gate Charge100 nC
Drain to Source Resistance50 mΩ
Nominal Vgs2.9 V
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)150 V
Schedule B8541290080
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 months ago)
Gate to Source Threshold Voltage2 V

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